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document number: 94485 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 1 igbt sip module (short circuit rated ultrafast igbt) CPV363M4KPBF vishay high power products features ? short circuit rated ultrafast: optimized for high speed over 5.0 khz (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 s at 125 c, v ge = 15 v ? fully isolated printed circuit board mount package ? switching-loss rating includes all ?tail? losses ? hexfred ? soft ultrafast diodes ? totally lead (pb)-free ? designed and qualified for industrial level description the igbt technology is the key to vishay?s hpp advanced line of ims (insulated metal substrate) power modules. these modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of t he familiar power mosfet. this superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. this package is highly suited to motor drive applications and wh ere space is at a premium. product summary output current in a typical 20 khz motor drive i rms per phase (1.94 kw total) with t c = 90 c 6.7 a rms t j 125 c supply voltage 360 vdc power factor 0.8 modulation depth (see fig. 1) 115 % v ce(on) (typical) at i c = 6.0 a, 25 c 1.72 v ims-2 rohs compliant absolute maximum ratings parameter symbol test conditions max. units collector to emitter voltage v ces 600 v continuous collector current, each igbt i c t c = 25 c 11 a t c = 100 c 6.0 pulsed collector current i cm repetitive rating; v ge = 20 v, pulse width limited by maximum junction temperature see fig. 20 22 a clamped inductive load current i lm v cc = 80 % (v ces ), v ge = 20 v, l = 10 h, r g = 22 see fig. 19 22 a diode continuous forward current i f t c = 100 c 6.1 a diode maximum forward current i fm 22 a short circuit withstand time t sc 10 s gate to emitter voltage v ge 20 v isolation voltage v isol any terminal to case, t = 1 minute 2500 v rms maximum power dissipation, each igbt p d t c = 25 c 36 w t c = 100 c 14 operating junction and storage temperature range t j , t stg - 40 to + 150 c soldering temperature for 10 s, (0.063" (1.6 mm) from case) 300 mounting torque 6-32 or m3 screw 5 to 7 (0.55 to 0.8) lbf ? in (n ? m)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94485 2 revision: 01-sep-08 CPV363M4KPBF vishay high power products igbt sip module (short circuit rated ultrafast igbt) notes (1) pulse width 80 s, duty factor 0.1 % (2) pulse width 5.0 s; single shot thermal and mechanical specifications parameter symbol typ. max. units junction to case, each igbt, one igbt in conduction r thjc (igbt) - 3.5 c/w junction to case, each diode, one diode in conduction r thjc (diode) - 5.5 case to sink, flat, greased surface r thcs (module) 0.10 - weight of module 20 - g 0.7 - oz. electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitter breakdown voltage v (br)ces (1) v ge = 0 v, i c = 250 a 600 - - v temperature coeff. of breakdown voltage v (br)ces / t j v ge = 0 v, i c = 1.0 ma - 0.45 - v/c collector to emitter saturation voltage v ce(on) i c = 6.0 a v ge = 15 v see fig. 2, 5 - 1.72 2.10 v i c = 11 a - 2.00 - i c = 6.0 a, t j = 150 c - 1.60 - gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 temperature coeff. of threshold voltage v ge(th) / t j -- 13 -mv/c forward transconductance g fe (2) v ce = 100 v, i c = 12 a 3.0 6.0 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v -- 250 a v ge = 0 v, v ce = 600 v, t j = 150 c - - 2500 diode forward voltage drop v fm i c = 12 a see fig. 13 -1.41.7 v i c = 12 a, t j = 150 c - 1.3 1.6 gate to emitter leakage current i ges v ge = 20 v - - 100 na
document number: 94485 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 3 CPV363M4KPBF igbt sip module (short circuit rated ultrafast igbt) vishay high power products switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units total gate charge (turn-on) q g i c = 6 a v cc = 400 v see fig. 8 -6191 nc gate to emitter charge (turn-on) q ge -7.411 gate to collector charge (turn-on) q gc -2740 turn-on delay time t d(on) t j = 25 c i c = 6.0 a, v cc = 480 v v ge = 15 v, r g = 23 energy losses include ?tail? and diode reverse recovery see fig. 9, 10, 18 -55- ns rise time t r -24- turn-off delay time t d(off) - 107 160 fall time t f -92140 turn-on switching loss e on -0.28- mj turn-off switching loss e off -0.10- total switching loss e ts - 0.39 0.50 short circuit withstand time t sc v cc = 360 v, t j = 125 c v ge = 15 v, r g = 23 , v cpk < 500 v 10 - - s turn-on delay time t d(on) t j = 150 c i c = 6.0 a, v cc = 480 v v ge = 15 v, r g = 23 energy losses include ?tail? and diode reverse recovery see fig. 10, 11, 18 -54- ns rise time t r -24- turn-off delay time t d(off) - 161 - fall time t f - 244 - total switching loss e ts -0.60-mj input capacitance c ies v ge = 0 v v cc = 30 v ? = 1.0 mhz see fig. 7 - 740 - pf output capacitance c oes - 100 - reverse transfer capacitance c res -9.3- diode reverse recovery time t rr t j = 25 c see fig. 14 i f = 12 a v r = 200 v di/dt = 200 a/s -4260 ns t j = 125 c - 80 120 diode peak reverse recovery current i rr t j = 25 c see fig. 15 -3.56.0 a t j = 125 c - 5.6 10 diode reverse recovery charge q rr t j = 25 c see fig. 16 -80180 nc t j = 125 c - 220 600 diode peak rate of fall of recovery during t b di (rec)m /dt t j = 25 c see fig. 17 - 180 - a/s t j = 125 c - 120 -
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94485 4 revision: 01-sep-08 CPV363M4KPBF vishay high power products igbt sip module (short circuit rated ultrafast igbt) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical trans fer characteristics fig. 4 - maximum collector current vs. case temperature fig. 5 - typical collector to emitter voltage vs. junction temperature 0.1 1 10 100 0 2 4 6 8 10 12 f, frequency (khz) load current (a) tc = 90c tj = 125c power factor = 0.8 modulation depth = 1.15 vcc = 50% of rated voltage total output power (kw) 2.92 2.33 1.75 1.17 0.58 0.00 3.50 0.1 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o 0.1 1 10 100 5 10 15 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o 0 3 6 9 12 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 12 c i = a 6 c i = a 3 c
document number: 94485 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 5 CPV363M4KPBF igbt sip module (short circuit rated ultrafast igbt) vishay high power products fig. 6 - maximum effective transient thermal impedance, junction to case fig. 7 - typical capacitance vs. collector to emitter voltage fig. 8 - typical gate charge vs. gate to emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching lo sses vs. junction temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c 1 10 100 0 300 600 900 1200 1500 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 6.0a cc c r 0 10 20 30 40 50 0.0 0.2 0.4 0.6 0.8 1.0 r , gate resistance ( ) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 6.0a cc ge j c 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = 23 v = 15v v = 480v g ge cc i = 12 a c i = 6 a c i = 3 a c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94485 6 revision: 01-sep-08 CPV363M4KPBF vishay high power products igbt sip module (short circuit rated ultrafast igbt) fig. 11 - typical switching losses vs. collector to emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 0 3 6 9 12 15 0.0 0.3 0.6 0.9 1.2 1.5 i , collector-to-emitter current (a) total switching losses (mj) c r = 23 t = 150 c v = 0v v = 15v g j cc ge 480v 1 10 100 1 10 100 1000 c ce i , collector-to-emitter current (a) safe operating area v = 20v t = 125c ge j v , collector-to-emitter voltage (v) a 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j
document number: 94485 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 7 CPV363M4KPBF igbt sip module (short circuit rated ultrafast igbt) vishay high power products fig. 14 - typical reverse recovery time vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs di f /dt 0 40 80 120 160 0 0 0 1 0 0 1 f di /dt - (a/s) t - (ns) rr i = 24a i = 12a i = 6.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 0 0 0 1 0 0 1 f di /dt - (a/s) i - (a) irrm i = 6.0a i = 12a i = 24a f f f v = 200v t = 125c t = 25c r j j 0 200 400 600 0 0 0 1 0 0 1 f di /dt - (a/s) rr q - (nc) i = 6.0a i = 12a i = 24a v = 200v t = 125c t = 25c r j j f f f 10 100 1000 10000 0 0 0 1 0 0 1 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 12a i = 24a i = 6.0a f f f v = 200v t = 125c t = 25c r j j
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94485 8 revision: 01-sep-08 CPV363M4KPBF vishay high power products igbt sip module (short circuit rated ultrafast igbt) fig. 18a - test circuit for measurements of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr fig. 18e - macro waveforms for figure 18a?s test circuit same type de v ice as d.u.t. d.u.t. 430 f 8 0 % of v ce t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = vce ic dt vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) eon = vce ic dt diode reverse recovery energy tx erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt vd ic dt ic dt vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2
document number: 94485 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 9 CPV363M4KPBF igbt sip module (short circuit rated ultrafast igbt) vishay high power products fig. 19 - clamped inductive load test circuit fig . 20 - pulsed collector current test circuit circuit configuration d.u.t. 50 v 6000 f 100 v 1000 v l v c 0 - 4 8 0 v r l = 4 8 0 v 4 x i c at 25 c 3 61 8 15 41016 9 12 71319 q1 q2 q3 d1 d2 d3 d4 d5 d6 q4 q5 q6 1 links to related documents dimensions http://www.vishay.com/doc?95066
document number: 95066 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jul-07 1 ims-2 (sip) outline dimensions vishay semiconductors dimensions in millimeters (inches) notes (1) tolerance uless otherwise sp ecified 0.254 mm (0.010") (2) controlling dimension: inch (3) terminal numbers are sh own for reference only ims-2 package outline (13 pins) 7.87 (0.310) 5.46 (0.215) 1.27 (0.050) 6.10 (0.240) 3.05 0.38 (0.120 0.015) 0.51 (0.020) 0.38 (0.015) 62.43 (2.458) 53.85 (2.120) ? 3.91 (0.154) 2 x 21.97 (0.865) 3.94 (0.155) 4.06 0.51 (0.160 0.020) 5.08 (0.200) 6 x 1.27 (0.050) 13 x 2.54 (0.100) 6 x 0.76 (0.030) 13 x 1 3 4 6 7 9 10 12 13 15 16 18 19 17 14 11 258
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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